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AS4C8M16SA-6TIN Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation |
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AS4C8M16SA-6TIN Datasheet(HTML) 5 Page - Alliance Semiconductor Corporation |
5 / 54 page AS4C8M16SA Confidential 5 Rev. 2.2 Mar /2014 WE# Input Write Enable: The WE# signal defines the operation commands in conjunction with the RAS# and CAS# signals and is latched at the positive edges of CLK. The WE# input is used to select the BankActivate or Precharge command and Read or Write command. LDQM, UDQM Input Data Input/Output Mask: Controls output buffers in read mode and masks Input data in write mode. DQ0-DQ15 Input / Output Data I/O: The DQ0-15 input and output data are synchronized with the positive edges of CLK. The I/Os are maskable during Reads and Writes. NC/RFU - No Connect: These pins should be left unconnected. VDDQ Supply DQ Power: Provide isolated power to DQs for improved noise immunity. ( 3.3V 0.3V ) VSSQ Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity. ( 0 V ) VDD Supply Power Supply: +3.3V 0.3V VSS Supply Ground |
Similar Part No. - AS4C8M16SA-6TIN |
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Similar Description - AS4C8M16SA-6TIN |
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