AS4C8M16SA-6TIN datasheet(5/54 Pages) ALSC

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AS4C8M16SA-6TIN Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation

Part #	AS4C8M16SA-6TIN

Description	Fully synchronous operation

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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AS4C8M16SA

Confidential

Rev. 2.2

Mar /2014

WE#

Input

Write Enable: The WE# signal defines the operation commands in conjunction

with the RAS# and CAS# signals and is latched at the positive edges of CLK. The

WE# input is used to select the BankActivate or Precharge command and Read or

Write command.

LDQM,

UDQM

Input

Data Input/Output Mask: Controls output buffers in read mode and masks

Input data in write mode.

DQ0-DQ15

Input /

Output

Data I/O: The DQ0-15 input and output data are synchronized with the positive

edges of CLK. The I/Os are maskable during Reads and Writes.

NC/RFU

No Connect: These pins should be left unconnected.

VDDQ

Supply

DQ Power: Provide isolated power to DQs for improved noise immunity.

( 3.3V

 0.3V )

VSSQ

Supply

DQ Ground: Provide isolated ground to DQs for improved noise immunity.

( 0 V )

VDD

Supply

Power Supply: +3.3V

 0.3V

VSS

Supply

Ground

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