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AS4C32M16MD1 Datasheet(PDF) 4 Page - Alliance Semiconductor Corporation

Part # AS4C32M16MD1
Description  Four internal banks for concurrent operation
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C32M16MD1 Datasheet(HTML) 4 Page - Alliance Semiconductor Corporation

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AS4C32M16MD1
Confidential
4
Rev. 2.0/February 2014
2. GENERAL DESCRIPTION
This device is 536,870,912 bits of double data rate synchronous DRAM organized as 4 banks of
8,388,608 words by 16 bits. The synchronous operation with Data Strobe allows extremely high
performance.
JSC is applied to reduce leakage and refresh currents while achieving very high speed.
I/O transactions are possible on both edges of the clock. The ranges of operating frequencies,
programmable burst length and programmable latencies allow the device to be useful for a variety of
high performance memory system applications.
Table 1. Speed Grade Information
Speed Grade – Data rate Clock Frequency
CAS Latency
tRCD (ns)
tRP (ns)
400Mbps (max)
200 MHz (max)
3
15
15
Table 2 – Ordering Information for ROHS Compliant Products
Product part No
Org
Temperature
Max Clock (MHz)
Package
AS4C32M16MD1-5BCN
32 x 16
-30°C to 85°C
200
60-ball FBGA


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