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MDP06N090 Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

Part # MDP06N090
Description  Single N-channel Trench MOSFET 60V, 62A, 9.0m(ohm)
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDP06N090 Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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Apr. 2015. Version 1.0
MagnaChip Semiconductor Ltd.
1
ㄹ
Absolute Maximum Ratings (Ta = 25
oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(1)
TC=25
oC
ID
62
A
TC=100
oC
40
Pulsed Drain Current
IDM
248
Power Dissipation
TC=25
oC
PD
70
W
TC=100
oC
28
Single Pulse Avalanche Energy
(2)
EAS
84.5
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
(1)
RθJA
62.5
oC/W
Thermal Resistance, Junction-to-Case
RθJC
1.8
MDP06N090
Single N-channel Trench MOSFET 60V, 62A, 9.0m
Ω
D
G
S
Features
VDS = 60V
ID = 62A @VGS = 10V
RDS(ON)
< 9.0
mΩ @VGS = 10V
100% UIL Tested
General Description
The MDP06N090 uses advanced MagnaChip
’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP06N090 is suitable device for Synchronous
Rectification For Server and general purpose applications.
TO-220


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