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MDP9N50B Datasheet(PDF) 3 Page - MagnaChip Semiconductor. |
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MDP9N50B Datasheet(HTML) 3 Page - MagnaChip Semiconductor. |
3 / 8 page Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd . 3 Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250㎂ T J, Junction Temperature [ oC] 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 0.6 0.8 1.0 1.2 1.4 1.6 V GS =10V V GS =20V I D ,Drain Current [A] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ ※ ※ ※ 1. V GS = 10 V 2. I D = 4.5A T J , Junction Temperature [ oC] 0 5 10 15 20 25 0 4 8 12 16 20 Notes 1. 250㎲ ㎲ ㎲ ㎲ Pulse Test 2. T C =25℃ ℃ ℃ ℃ V gs =5.0V =5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V V DS ,Drain-Source Voltage [V] 3 4 5 6 7 0.1 1 10 -55℃ 25℃ 150℃ * Notes ; 1. Vds=30V V GS [V] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25℃ 150℃ Notes : ※ 1. V GS = 0 V 2.250µs Pulse test V SD , Source-Drain Voltage [V] |
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