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MDP10N60G Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MDP10N60G Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 8 page  Dec. 2014 Version 1.5 MagnaChip Semiconductor Ltd. 2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP10N60GTH -55~150 oC TO-220 Tube Halogen Free MDF10N60GTH -55~150 oC TO-220F Tube Halogen Free Electrical Characteristics (Ta =25 oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.3A 0.58 0.7 Ω Forward Transconductance gfs VDS = 30V, ID = 5.0A - 9 - S Dynamic Characteristics Total Gate Charge Qg VDS = 480V, ID = 10A, VGS = 10V (3) - 32 - nC Gate-Source Charge Qgs - 8.7 - Gate-Drain Charge Qgd - 12.2 - Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1.0MHz - 1360 pF Reverse Transfer Capacitance Crss - 7.7 Output Capacitance Coss - 151 Turn-On Delay Time td(on) VGS = 10V, VDS = 300V, ID = 10A, RG = 25Ω (3) - 53 ns Rise Time tr - 38 Turn-Off Delay Time td(off) - 116 Fall Time tf - 32 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - 10 - A Source-Drain Diode Forward Voltage VSD IS = 10A, VGS = 0V - 1.4 V Body Diode Reverse Recovery Time trr IF = 10A, dl/dt = 100A/μs (3) - 340 ns Body Diode Reverse Recovery Charge Qrr - 3.3 μC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤10A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=9.6mH, IAS=10.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, |
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