MDP12N50BTH datasheet(2/8 Pages) MGCHIP

Part #	MDP12N50BTH

Description	N-Channel MOSFET 500V, 11.5A, 0.65(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 8 page

May 2012. Version 1.1

MagnaChip Semiconductor Ltd

.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP12N50BTH

-55~150

oC

TO-220

Tube

Halogen Free

MDF12N50BTH

-55~150

oC

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta = 25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

500

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

2.0

-

4.0

Drain Cut-Off Current

IDSS

VDS = 500V, VGS = 0V

-

1

µA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

-

100

nA

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 5.75A

-

0.55

0.65

Forward Transconductance

gfs

VDS = 30V, ID = 5.75A

-

15

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = 400V, ID = 11.5A, VGS = 10V

(3)

-

19.3

-

nC

Gate-Source Charge

Qgs

-

4.6

-

Gate-Drain Charge

Qgd

-

6.1

-

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

-

1034

-

pF

Reverse Transfer Capacitance

Crss

-

5.1

-

Output Capacitance

Coss

-

126

-

Turn-On

Delay Time

td(on)

VGS = 10V, VDS = 250V, ID =11.5A,

RG = 25

(3)

-

16

-

ns

Rise Time

tr

-

35

-

Turn-Off Delay Time

td(off)

-

31

-

Fall Time

tf

-

40

-

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current

IS

-

11.5

-

A

Source-Drain Diode Forward Voltage

VSD

IS = 11.5A, VGS = 0V

-

1.4

V

Body Diode Reverse Recovery Time

trr

IF = 11.5A, di/dt = 100A/µs

-

310

-

ns

Body Diode Reverse Recovery

Charge

Qrr

-

2.6

-

µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3. ISD ≤11.5A, di/dt≤200A/us, VDD≤BVDSS, Rg =25 , Starting TJ=25°C

4. L=6.3mH, IAS=11.5A, VDD=50V, , Rg =25 , Starting TJ=25°C

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