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MDP12N50BTH Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MDP12N50BTH Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
2 / 8 page May 2012. Version 1.1 MagnaChip Semiconductor Ltd . 2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP12N50BTH -55~150 oC TO-220 Tube Halogen Free MDF12N50BTH -55~150 oC TO-220F Tube Halogen Free Electrical Characteristics (Ta = 25 oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0 Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.75A - 0.55 0.65 Forward Transconductance gfs VDS = 30V, ID = 5.75A - 15 - S Dynamic Characteristics Total Gate Charge Qg VDS = 400V, ID = 11.5A, VGS = 10V (3) - 19.3 - nC Gate-Source Charge Qgs - 4.6 - Gate-Drain Charge Qgd - 6.1 - Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1.0MHz - 1034 - pF Reverse Transfer Capacitance Crss - 5.1 - Output Capacitance Coss - 126 - Turn-On Delay Time td(on) VGS = 10V, VDS = 250V, ID =11.5A, RG = 25 (3) - 16 - ns Rise Time tr - 35 - Turn-Off Delay Time td(off) - 31 - Fall Time tf - 40 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - 11.5 - A Source-Drain Diode Forward Voltage VSD IS = 11.5A, VGS = 0V - - 1.4 V Body Diode Reverse Recovery Time trr IF = 11.5A, di/dt = 100A/µs - 310 - ns Body Diode Reverse Recovery Charge Qrr - 2.6 - µC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤11.5A, di/dt≤200A/us, VDD≤BVDSS, Rg =25 , Starting TJ=25°C 4. L=6.3mH, IAS=11.5A, VDD=50V, , Rg =25 , Starting TJ=25°C |
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