MDF18N50B datasheet(4/8 Pages) MGCHIP

Part #	MDF18N50B

Description	N-Channel MOSFET 500V, 18.0 A, 0.27(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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4 / 8 page

Dec 2011. Version 1.0

MagnaChip Semiconductor Ltd

.

4

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

MDP18N50B (TO-220)

Fig.10 Maximum Drain Current vs. Case

Temperature

Fig.11 Transient Thermal Response Curve

MDP18N50B (TO-220)

Fig.12 Single Pulse Maximum Power

Dissipation – MDP18N50B (TO-220)

0

10

20

30

40

50

0

2

4

6

8

10

400V

250V

100V

Note : I

※

D

= 18.0A

Q

G

, Total Gate Charge [nC]

1

10

0

1000

2000

3000

4000

5000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

Notes ;

※

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

10

-1

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

10 µs

100 µs

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

T

J=Max rated

T

C=25

℃

V

DS, Drain-Source Voltage [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

Notes :

※

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JC* Rθ JC

(t) + T

C

R

Θ JC

=0.53 /W

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Rectangular Pulse Duration [sec]

1E-5

1E-4

1E-3

0.01

0.1

1

0

3000

6000

9000

12000

15000

18000

21000

24000

27000

30000

single Pulse

R

thJC = 0.53

/W

℃

T

C = 25

℃

Pulse Width (s)

25

50

75

100

125

150

0

2

4

6

8

10

12

14

16

18

20

T

C, Case Temperature [

]

℃

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