MDP1930TH datasheet(3/6 Pages) MGCHIP

Part #	MDP1930TH

Description	Single N-channel Trench MOSFET 80V, 120A, 2.5m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

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3 / 6 page

Nov. 2014. Version 1.0

MagnaChip Semiconductor Ltd.

3

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with

Temperature

Fig.4 On-Resistance Variation with

Gate to Source Voltage

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

0.0

0.3

0.6

0.9

1.2

1.5

1

10

100

T

A=25

℃

※ Notes :

V

GS = 0V

V

SD, Source-Drain voltage [V]

-50

-25

0

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. V

GS = 10 V

2. I

D = 50 A

T

J, Junction Temperature [

oC]

4

5

6

7

8

9

10

0

2

4

6

8

10

12

14

16

18

20

※ Notes :

I

D = 50A

T

A = 25

℃

V

GS, Gate to Source Volatge [V]

0

10

20

30

40

50

60

70

80

90

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

GS = 10V

I

D, Drain Current [A]

0

1

2

3

4

5

6

7

8

0

10

20

30

40

50

60

70

80

90

100

V

GS, Gate-Source Voltage [V]

T

A=25

℃

※ Notes :

V

DS = 10V

0

1

2

3

4

5

0

20

40

60

80

100

120

140

160

180

200

10 V

5.0 V

6.0 V

4.5 V

4.0 V

V

DS, Drain-Source Voltage [V]

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