MDP1932TH datasheet(2/6 Pages) MGCHIP

Part #	MDP1932TH

Description	Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 6 page

Aug. 2014. Version 1.1

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP1932TH

-55~150

oC

TO-220

Tube

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

80

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

-

4.0

Drain Cut-Off Current

IDSS

VDS = 64V, VGS = 0V

-

1.0

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 50A

-

3.0

3.4

m

Ω

Forward Transconductance

gfs

VDS = 10V, ID = 50A

-

90

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = 40V, ID = 50A,

VGS = 10V

-

105

-

nC

Gate-Source Charge

Qgs

-

30

-

Gate-Drain Charge

Qgd

-

22

-

Input Capacitance

Ciss

VDS = 40V, VGS = 0V,

f = 1.0MHz

-

7,200

-

pF

Reverse Transfer Capacitance

Crss

-

50

-

Output Capacitance

Coss

-

1,550

-

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 40V,

ID = 50A , RG = 3.0Ω

-

31

-

ns

Rise Time

tr

-

65

-

Turn-Off Delay Time

td(off)

-

48

-

Fall Time

tf

-

30

-

Gate Resistance

Rg

f=1 MHz

-

3.0

-

Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 50A, VGS = 0V

-

0.9

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 50A, dl/dt = 100A/μs

-

73

ns

Body Diode Reverse Recovery Charge

Qrr

-

161

nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited

2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 25.0A, VGS = 10V.

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MDP1932TH Datasheet(PDF) 2 Page - MagnaChip Semiconductor.

MDP1932TH Datasheet(HTML) 2 Page - MagnaChip Semiconductor.

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