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MDS1526URH Datasheet(PDF) 1 Page - MagnaChip Semiconductor. |
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MDS1526URH Datasheet(HTML) 1 Page - MagnaChip Semiconductor. |
1 / 5 page June. 2011. Version1.2 MagnaChip Semiconductor Ltd . 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (1) TC=25 oC ID 16.1 A TC=70 oC 12.8 TA=25 oC 11.3 (3) TA=70 oC 9.1 (3) Pulsed Drain Current IDM 40 A Power Dissipation TC=25 oC PD 5.0 W TC=70 oC 3.2 TA=25 oC 2.5 (3) TA=70 oC 1.6 (3) Single Pulse Avalanche Energy (2) EAS 38 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 50 oC/W Thermal Resistance, Junction-to-Case RθJC 24.6 MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0m Features VDS = 30V ID = 16.1A @VGS = 10V RDS(ON) < 11.0m @VGS = 10V < 16.4m @VGS = 4.5V 100% UIL Tested 100% Rg Tested General Description The MDS1526 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1526 is suitable for DC/DC converter and general purpose applications. D G S 1(S) 2(S) 3(S) 4(G) 8(D) 7(D) 6(D) 5(D) |
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