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SKM400GAL12E4 Datasheet(PDF) 1 Page - Semikron International |
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SKM400GAL12E4 Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SKM400GAL12E4 © by SEMIKRON Rev. 3 – 21.08.2013 1 SEMITRANS® 3 GAL IGBT4 Modules SKM400GAL12E4 Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 12kHz • UL recognized, file no. E63532 Typical Applications* •DC/DC – converter • Brake chopper • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tj = 175 °C Tc =25 °C 616 A Tc =80 °C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25 °C 440 A Tc =80 °C 329 A IFnom 400 A IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1980 A Tj -40 ... 175 °C Freewheeling diode IF Tj = 175 °C Tc =25 °C 440 A Tc =80 °C 329 A IFnom 400 A IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1980 A Tj -40 ... 175 °C Module It(RMS) Tterminal =80 °C 500 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =400 A VGE =15 V chiplevel Tj =25 °C 1.80 2.05 V Tj =150 °C 2.20 2.40 V VCE0 chiplevel Tj =25 °C 0.8 0.9 V Tj =150 °C 0.7 0.8 V rCE VGE =15 V chiplevel Tj =25 °C 2.50 2.88 m Tj =150 °C 3.75 4.00 m VGE(th) VGE=VCE, IC = 15.2 mA 5 5.8 6.5 V ICES VGE =0 V VCE = 1200 V Tj =25 °C 5mA Tj =150 °C mA Cies VCE =25V VGE =0 V f=1MHz 24.6 nF Coes f=1MHz 1.62 nF Cres f=1MHz 1.38 nF QG VGE = - 8 V...+ 15 V 2260 nC RGint Tj =25°C 1.9 |
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