SKM400GAL12E4_13 datasheet(1/5 Pages) SEMIKRON

Part #	SKM400GAL12E4

Description	IGBT4 Modules

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Manufacturer	SEMIKRON [Semikron International]

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SKM400GAL12E4

Rev. 3 – 21.08.2013

1

SEMITRANS® 3

GAL

IGBT4 Modules

SKM400GAL12E4

Features

• IGBT4 = 4. generation medium fast

trench IGBT (Infineon)

• CAL4 = Soft switching 4. generation

CAL-diode

• Isolated copper baseplate using DBC

technology (Direct Bonded Copper)

• Increased power cycling capability

• With integrated gate resistor

• For higher switching frequenzies up to

12kHz

• UL recognized, file no. E63532

Typical Applications*

•DC/DC – converter

• Brake chopper

• Switched reluctance motor

Remarks

• Case temperature limited

to Tc = 125°C max.

• Recommended Top = -40 ... +150°C

• Product reliability results valid

for Tj = 150°C

Absolute Maximum Ratings

Symbol

Conditions

Values

Unit

IGBT

VCES

Tj =25°C

1200

V

IC

Tj = 175 °C

Tc =25 °C

616

A

Tc =80 °C

474

A

ICnom

400

A

ICRM

ICRM = 3xICnom

1200

A

VGES

-20 ... 20

V

tpsc

VCC = 800 V

VGE

≤ 15 V

VCES

≤ 1200 V

Tj =150 °C

10

µs

Tj

-40 ... 175

°C

Inverse diode

IF

Tj = 175 °C

Tc =25 °C

440

A

Tc =80 °C

329

A

IFnom

400

A

IFRM

IFRM = 3xIFnom

1200

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

1980

A

Tj

-40 ... 175

°C

Freewheeling diode

IF

Tj = 175 °C

Tc =25 °C

440

A

Tc =80 °C

329

A

IFnom

400

A

IFRM

IFRM = 3xIFnom

1200

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

1980

A

Tj

-40 ... 175

°C

Module

It(RMS)

Tterminal =80 °C

500

A

Tstg

-40 ... 125

°C

Visol

AC sinus 50 Hz, t = 1 min

4000

V

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

IGBT

VCE(sat)

IC =400 A

VGE =15 V

chiplevel

Tj =25 °C

1.80

2.05

V

Tj =150 °C

2.20

2.40

V

VCE0

chiplevel

Tj =25 °C

0.8

0.9

V

Tj =150 °C

0.7

0.8

V

rCE

VGE =15 V

chiplevel

Tj =25 °C

2.50

2.88

m

Tj =150 °C

3.75

4.00

m

VGE(th)

VGE=VCE, IC = 15.2 mA

5

5.8

6.5

V

ICES

VGE =0 V

VCE = 1200 V

Tj =25 °C

5mA

Tj =150 °C

mA

Cies

VCE =25V

VGE =0 V

f=1MHz

24.6

nF

Coes

f=1MHz

1.62

nF

Cres

f=1MHz

1.38

nF

QG

VGE = - 8 V...+ 15 V

2260

nC

RGint

Tj =25°C

1.9



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