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SKM400GB126D Datasheet(PDF) 1 Page - Semikron International |
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SKM400GB126D Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SKM400GB126D © by SEMIKRON Rev. 1.0 – 20.07.2015 1 SEMITRANS® 3 GB Trench IGBT Modules SKM400GB126D Features • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tj = 150 °C Tc =25 °C 470 A Tc =80 °C 327 A ICnom 300 A ICRM ICRM = 2xICnom 600 A VGES -20 ... 20 V tpsc VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj =125 °C 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150 °C Tc =25 °C 352 A Tc =80 °C 240 A IFnom 300 A IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj =25°C 2844 A Tj -40 ... 150 °C Module It(RMS) 500 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =300 A VGE =15 V chiplevel Tj =25 °C 1.69 2.10 V Tj =125 °C 2.01 2.45 V VCE0 chiplevel Tj =25 °C 11.2 V Tj =125 °C 0.9 1.1 V rCE VGE =15 V chiplevel Tj =25 °C 2.3 3 mΩ Tj =125 °C 3.7 4.5 mΩ VGE(th) VGE=VCE, IC =12 mA 5 5.8 6.5 V ICES VGE =0 V VCE = 1200 V Tj =25 °C 4mA Tj =125 °C mA Cies VCE =25V VGE =0 V f=1MHz 21.4 nF Coes f=1MHz 1.12 nF Cres f=1MHz 0.97 nF QG VGE = - 8 V...+ 20 V 2800 nC RGint Tj =25°C 2.5 Ω td(on) VCC = 600 V IC =300 A VGE = +15/-15 V RG on =2 Ω RG off =2 Ω Tj =125 °C 330 ns tr Tj =125 °C 50 ns Eon Tj =125 °C 29 mJ td(off) Tj =125 °C 650 ns tf Tj =125 °C 110 ns Eoff Tj =125 °C 48 mJ Rth(j-c) per IGBT 0.08 K/W |
Similar Part No. - SKM400GB126D_15 |
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Similar Description - SKM400GB126D_15 |
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