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SKM500MB120SC Datasheet(PDF) 2 Page - Semikron International |
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SKM500MB120SC Datasheet(HTML) 2 Page - Semikron International |
2 / 3 page SKM500MB120SC 2 Rev. 0.1 – 27.05.2015 © by SEMIKRON SEMITRANS® 3 MB SiC MOSFET Module SKM500MB120SC Target Data Features • Full Silicon Carbide (SiC) power module • Latest generation SiC MOSFETs • Optimized for fast switching and lowest power losses • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • UL recognized, file no. E63532 Typical Applications* • High frequency power supplies •AC inverters Remarks • Case temperature limited to Tc=125°C max. • Recommended Top= -40…+150°C Characteristics Symbol Conditions min. typ. max. Unit Module LDS 15 nH RCC'+EE' terminal-chip 0.55 mΩ 0.85 mΩ Rth(c-s)1 per module t.b.d K/W Rth(c-s)2 including thermal coupling, Ts underneath module K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm Nm w 325 g |
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