MDS1652 datasheet(2/6 Pages) MGCHIP

Part #	MDS1652

Description	Single N-Channel Trench MOSFET 30V, 17A, 6.5m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 6 page

December 2008. Version 1.1

MagnaChip Semiconductor Ltd

.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDS1652RP

-55~150

oC

SOIC-8

Tape & Reel

Pb Free

MDS1652RH

-55~150

oC

SOIC-8

Tape & Reel

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

30

-

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

1.0

1.8

3.0

V

Drain Cut-Off Current

IDSS

VDS = 24V, VGS = 0V

-

1

µA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

±100

nA

VGS = 10V, ID = 15A

-

5.1

6.5

Drain-Source ON Resistance

RDS(ON)

VGS = 4.5V, ID = 12A

-

6.7

9.5

m

Forward Transconductance

gfs

VDS = 5V, ID = 15A

-

30

-

S

Dynamic Characteristics

Total Gate Charge

Qg(10V)

-

50.0

-

Gate-Source Charge

Qgs

-

4.2

-

Gate-Drain Charge

Qgd

VDS = 24V, ID = 15A,

VGS = 10V

-

15.0

-

nC

Input Capacitance

Ciss

-

2220

-

Reverse Transfer Capacitance

Crss

-

400

-

Output Capacitance

Coss

VDS = 10V, VGS = 0V,

f = 1.0MHz

-

581

-

pF

Turn-On Delay Time

td(on)

-

12.5

-

Rise Time

tr

-

22.0

-

Turn-Off Delay Time

td(off)

-

77.5

-

Fall Time

tf

VGS = 10V, VDD = 15V,

ID = 6.5A, RG = 4.7

-

72.0

-

ns

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 15A, VGS = 0V

-

0.78

1.0

V

Note :

1. Surface mounted RF4 board with 2oz. Copper.

2. Starting TJ = 25°C, L = 1mH, IAS = 14A VDD = 15V, VGS = 10V.

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