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MDS1652RP Datasheet(PDF) 4 Page - MagnaChip Semiconductor. |
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MDS1652RP Datasheet(HTML) 4 Page - MagnaChip Semiconductor. |
4 / 6 page December 2008. Version 1.1 MagnaChip Semiconductor Ltd . 4 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current Vs. Case Temperature 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd Notes ; ※ 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 T C, Case Temperature [ ] ℃ Fig.11 Transient Thermal Response Curve 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 1E-3 0.01 0.1 1 10 Notes : ※ Duty Factor, D=t 1/t2 PEAK T J = PDM * Zθ JA* Rθ JA (t) + T A R Θ JA =40 /W ℃ single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Rectangular Pulse Duration [sec] 0 10 20 30 40 50 0 2 4 6 8 10 Note : I ※ D = 15A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 us 1s 100 ms DC 10 ms 1 ms Operation in This Area is Limited by R DS(on) Single Pulse R θ JA =40 /W ℃ T a=25 ℃ V DS, Drain-Source Voltage [V] |
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