MDS1652RP datasheet(4/6 Pages) MGCHIP

Part #	MDS1652RP

Description	Single N-Channel Trench MOSFET 30V, 17A, 6.5m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

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4 / 6 page

December 2008. Version 1.1

MagnaChip Semiconductor Ltd

.

4

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating

Area

Fig.10 Maximum Drain Current

Vs. Case Temperature

0

5

10

15

20

25

30

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

3000

3200

3400

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0

2

4

6

8

10

12

14

16

18

20

T

C, Case Temperature [

]

℃

Fig.11 Transient Thermal Response

Curve

1E-5

1E-4

1E-3

0.01

0.1

1

10

100

1000

1E-3

0.01

0.1

1

10

Notes :

※

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JA* Rθ JA

(t) + T

A

R

Θ JA

=40 /W

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Rectangular Pulse Duration [sec]

0

10

20

30

40

50

0

2

4

6

8

10

Note : I

※

D = 15A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

10 us

1s

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

R

θ JA

=40

/W

℃

T

a=25

℃

V

DS, Drain-Source Voltage [V]

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