MDS1653URH datasheet(2/6 Pages) MGCHIP

Part #	MDS1653URH

Description	Single N-Channel Trench MOSFET 30V, 12A, 12m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 6 page

Feb. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

ROHS Status

MDS1653URH

-55~150

oC

SOIC-8

Tape & Reel

Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

30

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

1.9

3.0

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

-

1

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 12A

-

8.5

12.0

mΩ

VGS = 4.5V, ID = 10A

-

12.0

17.5

Forward Transconductance

gfs

VDS = 5V, ID = 12A

-

19

-

S

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15V, ID = 12A,

VGS = 10V

17.5

-

nC

Total Gate Charge

Qg(4.5V)

9.0

-

Gate-Source Charge

Qgs

-

3.0

-

Gate-Drain Charge

Qgd

-

3.5

-

Input Capacitance

Ciss

VDS = 15V, VGS = 0V,

f = 1.0MHz

-

956

pF

Reverse Transfer Capacitance

Crss

-

108

Output Capacitance

Coss

-

190

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 15V,

RL = 3Ω, RG = 3Ω

-

7.2

-

ns

Rise Time

tr

-

23.6

-

Turn-Off Delay Time

td(off)

-

25.2

-

Fall Time

tf

-

10.6

-

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 1A, VGS = 0V

-

0.72

1.0

V

Body Diode Reverse Recovery Time

trr

IF = 12A, dl/dt = 100A/μs

-

19

21

ns

Body Diode Reverse Recovery Charge

Qrr

-

9

12

nC

Note :

1. Surface mounted FR-4 board with 2oz. Copper.

2. Starting TJ = 25°C, L = 1mH, IAS = 10A, VDD = 15V, VGS = 10V.

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