MDS3604URH datasheet(4/6 Pages) MGCHIP

Part #	MDS3604URH

Description	Single P-Channel Trench MOSFET, -30V, -11A, 12.1m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

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4 / 6 page

May. 2011 Version 1.1

MagnaChip Semiconductor Ltd

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4

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain

Current vs.

Ambient Temperature

Fig.11 Transient Thermal Response Curve

0

5

10

15

20

25

30

0.0

500.0p

1.0n

1.5n

2.0n

2.5n

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

-V

DS [V]

10

-1

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

100 us

1 ms

100s

10s

1s

100 ms

DC

10 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

R

θ ja

=50

/W

℃

T

a=25

℃

-V

DS [V]

25

50

75

100

125

150

0

2

4

6

8

10

12

14

16

T

a [

]

℃

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

* Notes :

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JA* Rθ JA

(t) + T

A

R

Θ JA

=50 /W

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Rectangular Pulse Duration [s]

0

10

20

30

40

0

2

4

6

8

10

* Note :V

DS = -15V

I

D = -12A

-Q

g [nC]

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