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MDS5951 Datasheet(PDF) 1 Page - MagnaChip Semiconductor. |
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MDS5951 Datasheet(HTML) 1 Page - MagnaChip Semiconductor. |
1 / 6 page February 2010. Version2.0 MagnaChip Semiconductor Ltd . 1 Absolute Maximum Ratings (TA =25 oC unless otherwise noted) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TA=25 oC 4.5 A Continuous Drain Current (Note 4) TA=70 oC ID 3.6 A Pulsed Drain Current (Note 3) IDM 20 A TA=25 oC 2.0 Power Dissipation for Single Operation (Note 2) TA=70 oC PD 1.28 W Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Steady-State) (Note 1) RθJA 62.5 Thermal Resistance, Junction-to-Case RθJC 34.0 oC/W MDS5951 Dual N-Channel Trench MOSFET 60V, 4.5A, 50m General Description The MDS5951 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Applications Inverters General purpose applications Features VDS = 60V ID = 4.5A @VGS = 10V RDS(ON) < 50m @ VGS = 10V < 60m @ VGS = 4.5V 1(S1) 2(G1) 3(S2) 4(G2) 8(D1) 7(D1) 6(D2) 5(D2) D1 G1 S1 D2 G2 S2 |
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