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CM1250-04QG Datasheet(PDF) 2 Page - ON Semiconductor |
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CM1250-04QG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page CM1250−04QG http://onsemi.com 2 Top View 6−Lead uDFN (0.4mm) CH1 (1) VN (2) CH2 (3) CH4 (6) VN (5) CH3 (4) PACKAGE / PINOUT DIAGRAM Table 1. PIN DESCRIPTIONS Pins Name Description (Refer to package / pinout diagram) CHx The cathode of the respective TVS diode, which should be connected to the node requiring transient voltage protection. (Refer to package / pinout diagram) VN The anode of the TVS diodes. SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Storage Temperature Range −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature −40 to +85 °C Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units CIN Channel Input Capacitance TA = 25°C, 0 VDC, 1 MHz; (Note 2) 5 7 pF TA = 25°C, 2.5 VDC, 1 MHz; (Note 2) 3 pF DCIN Differential Channel I/O to GND Capacitance TA = 25°C, 2.5 VDC, 1 MHz; (Note 2) 0.14 pF ILEAK Leakage Current VIN = 3.5 VDC, TA = 25°C 0.10 mA VSIG Small Signal Clamp Voltage Positive Clamp Negative Clamp I = 5 mA, TA = 25°C I = −5 mA, TA = 25°C 6.1 −1.5 8.5 −0.4 V VESD ESD Withstand Voltage Contact Discharge per IEC 61000−4−2 standard Human Body Model, MIL−STD−883, Method 3015 TA = 25°C; (Notes 2, 4 and 5) TA = 25°C; (Notes 2, 3 and 5) ±8 ±15 kV RD Diode Dynamic Resistance Forward Conduction Reverse Conduction TA = 25°C (Note 2) 0.7 2.1 W 1. All parameters specified at TA = −40°C to +85°C unless otherwise noted. 2. These parameters guaranteed by design and characterization. 3. Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 KW, VN grounded. 4. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VN grounded. 5. These measurements performed with no external capacitor on CHX. |
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