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MDU5692SVRH Datasheet(PDF) 4 Page - MagnaChip Semiconductor. |
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MDU5692SVRH Datasheet(HTML) 4 Page - MagnaChip Semiconductor. |
4 / 9 page Aug. 2015 Ver. 1.1 MagnaChip Semiconductor Ltd. 4 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature Fig.11 Transient Thermal Response Curve 0 5 10 15 20 25 30 0 500 1000 1500 2000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 20 40 60 80 Limited by Package T C, Case Temperature [ ℃ ] 0 5 10 15 20 0 2 4 6 8 10 ※ Note : I D = 20A V DS = 15V Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 ms 10 ms 10s 1s 100 ms DC Operation in This Area is Limited by R DS(on) Single Pulse T J=Max Rated T C=25 ℃ V DS, Drain-Source Voltage [V] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 ※ Notes : Duty Factor, D=t 1/t2 PEAK T J = PDM * Z θ JC* Rθ JC(t) + TC single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Rectangular Pulse Duration [sec] |
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