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MDV3604 Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

Part # MDV3604
Description  Single P-Channel Trench MOSFET, -30V, -20A, 12.1m(ohm)
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDV3604 Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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Jan. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
1
Absolute Maximum Ratings (Ta =25
oC unless otherwise noted)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current
(1)
TC=25
oC (Package limited)
ID
-20
A
TC=25
oC (Silicon limited)
-36.1
TA=25
oC
-12.6
(3)
TA=70
oC
-10.2
(3)
Pulsed Drain Current
IDM
-32
A
Power Dissipation
TC=25
oC
PD
27.7
W
TA=25
oC
3.4
(3)
Single Pulse Avalanche Energy
(2)
EAS
84.5
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
(Note 1)
RθJA
36
oC/W
Thermal Resistance, Junction-to-Case
RθJC
4.5
MDV3604
Single P-Channel Trench MOSFET, -30V, -20A, 12.1mΩ
General Description
The MDV3604 uses advanced MagnaC
hip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -20A @VGS = -10V
RDS(ON)
< 10.0m
Ω
@VGS = -20V
< 12.1m
Ω
@VGS = -10V
< 18.3m
Ω
@VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
PDFN33
S
S
S
G
G
S
S
S
D
D
D
D
D
D
D
D
D
G
S
G
S


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