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MMD70R1K4P Datasheet(PDF) 3 Page - MagnaChip Semiconductor. |
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MMD70R1K4P Datasheet(HTML) 3 Page - MagnaChip Semiconductor. |
3 / 10 page MMD70R1K4P Datasheet Aug. 2013 Revision 1.0 MagnaChip Semiconductor Ltd. 3 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source Breakdown voltage V(BR)DSS 700 - - V VGS = 0V, ID=0.25mA Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID=0.25mA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 700V, VGS = 0V Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS =0V Drain-Source On State Resistance RDS(ON) - 1.26 1.4 Ω VGS = 10V, ID = 1.0A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 312 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 240 - Reverse Transfer Capacitance Crss - 15.4 - Effective Output Capacitance Energy Related (3) Co(er) - 13.5 - VDS = 0V to 560V, VGS = 0V,f = 1.0MHz Turn On Delay Time td(on) - 9 - ns VGS = 10V, RG = 25Ω, VDS = 350V, ID = 3.2A Rise Time tr - 20 - Turn Off Delay Time td(off) - 33 - Fall Time tf - 21 - Total Gate Charge Qg - 11 - nC VGS = 10V, VDS =560V, ID = 3.2A Gate – Source Charge Qgs - 2.2 - Gate – Drain Charge Qgd - 5.1 - Gate Resistance RG - 7.6 - Ω VGS = 0V, f = 1.0MHz 3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Static Characteristics (T c=25℃ unless otherwise specified) Dynamic Characteristics (T c=25℃ unless otherwise specified) |
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