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MMD80R1K2P Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MMD80R1K2P Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
2 / 10 page MMD80R1K2P Final Datasheet Dec. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 800 V Gate – Source voltage VGSS ±30 V Continuous drain current ID 4.5 A TC=25℃ 2.85 A TC=100℃ Pulsed drain current (1) IDM 13.5 A Power dissipation PD 56.8 W Single - pulse avalanche energy EAS 170 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (2) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 ℃ Maximum operating junction temperature Tj 150 ℃ 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 2.2 ℃/W Thermal resistance, junction-ambient max Rthja 62.5 ℃/W Thermal Characteristics Absolute Maximum Rating (Tc=25℃ unless otherwise specified) |
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