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MMD80R1K2P Datasheet(PDF) 2 Page - MagnaChip Semiconductor.

Part # MMD80R1K2P
Description  800V 1.2(ohm) N-channel MOSFET
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MMD80R1K2P Datasheet(HTML) 2 Page - MagnaChip Semiconductor.

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MMD80R1K2P Final Datasheet
Dec. 2015 Revision 1.0
MagnaChip Semiconductor Ltd.
2
Parameter
Symbol
Rating
Unit
Note
Drain
– Source voltage
VDSS
800
V
Gate
– Source voltage
VGSS
±30
V
Continuous drain current
ID
4.5
A
TC=25℃
2.85
A
TC=100℃
Pulsed drain current
(1)
IDM
13.5
A
Power dissipation
PD
56.8
W
Single - pulse avalanche energy
EAS
170
mJ
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Diode dv/dt ruggedness
(2)
dv/dt
15
V/ns
Storage temperature
Tstg
-55 ~150
℃
Maximum operating junction
temperature
Tj
150
℃
1)
Pulse width tP limited by Tj,max
2)
ISD ≤ ID, VDS peak ≤ V(BR)DSS
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case max
Rthjc
2.2
℃/W
Thermal resistance, junction-ambient max
Rthja
62.5
℃/W
 Thermal Characteristics
 Absolute Maximum Rating (Tc=25℃ unless otherwise specified)


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