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SF8GZ47 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SF8GZ47 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  SF8GZ47,SF8JZ47 2001-07-13 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current and Repetitive Peak Reverse Current IDRM IRRM VDRM = VRRM = Rated ― ― 10 µA Peak On−State Voltage VTM ITM = 25 A ― ― 1.5 V Gate Trigger Voltage VGT ― ― 1.0 V Gate Trigger Current IGT VD = 6 V, RL = 10 Ω ― ― 10 mA Gate Non−Trigger Voltage VGD VD = Rated × 2 / 3, Tc = 125°C 0.2 ― ― V Critical Rate of Rise of Off−State Voltage dv / dt VDRM = Rated, Tc = 125°C Exponential Rise ― 50 ― V / µs Holding Current IH VD = 6 V, ITM = 1 A ― ― 40 mA Latching Current IL VD = 6 V, f = 50Hz, tgw = 50 µs, iG = 30 mA ― ― 50 mA Thermal Resistance Rth (j−c) Junction to Case ― ― 3.7 °C / W MARKING F8GZ47 SF8GZ47 *1 TYPE F8JZ47 TYPE NAME SF8JZ47 *2 Example 8A:January 1998 8B:Febrary 1998 8L:December 1998 |
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