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MMF80R900PTH Datasheet(PDF) 1 Page - MagnaChip Semiconductor. |
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MMF80R900PTH Datasheet(HTML) 1 Page - MagnaChip Semiconductor. |
1 / 10 page MMF80R900P Datasheet Jan. 2015 Revision 1.1 MagnaChip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 850 V RDS(on),max 0.9 Ω VTH,typ 3 V ID 6 A Qg,typ 17.6 nC Order Code Marking Temp. Range Package Packing RoHS Status MMF80R900PTH 80R900P -55 ~ 150℃ TO-220F Tube Halogen Free MMF80R900P 800V 0.9Ω N-channel MOSFET Description MMF80R900P is power MOSFET using magnachip ’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free Key Parameters Ordering Information Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters D G S G D S Package & Internal Circuit |
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