SI4505DY datasheet(2/8 Pages) VISHAY

Part #	SI4505DY

Description	N- and P-Channel MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4505DY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71826

S-20829—Rev. A, 17-Jun-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

VDS = VGS, ID = 250 mA

N-Ch

0.8

1.8

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

N-Ch

P-Ch

–0.45

1.0

V

VDS = 0 V, VGS = "20 V

N-Ch

"100

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

N-Ch

P-Ch

"100

nA

VDS = 24 V, VGS = 0 V

N-Ch

1

VDS = –6.4 V, VGS = 0 V

N-Ch

P-Ch

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

N-Ch

5

mA

VDS = –6.4 V, VGS = 0 V, TJ = 55_C

N-Ch

P-Ch

–5

VDS = 5 V, VGS = 10 V

N-Ch

20

On-State Drain Currentb

ID(on)

VDS = –5 V, VGS = –4.5 V

N-Ch

P-Ch

–20

A

VGS = 10 V, ID = 7.8 A

N-Ch

0.015

0.018

VGS = –4.5 V, ID = –5.0 A

N-Ch

P-Ch

0.030

0.042

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 4.5 V, ID = 6.4 A

N-Ch

0.022

0.027

W

VGS = –2.5 V, ID = –4.0 A

N-Ch

P-Ch

0.048

0.060

VDS = 15 V, ID = 7.8 A

N-Ch

18

Forward Transconductanceb

gfs

VDS = –15 V, ID = –5.0 A

N-Ch

P-Ch

12

S

IS = 1.8 A, VGS = 0 V

N-Ch

0.73

1.1

Diode Forward Voltageb

VSD

IS = –1.8 A, VGS = 0 V

N-Ch

P-Ch

–0.75

–1.1

V

Dynamica

N-Ch

11.5

20

Total Gate Charge

Qg

N-Ch

P-Ch

13.5

20

N-Channel

VDS = 15 V, VGS = 5 V, ID = 7.8 A

N-Ch

3

Gate-Source Charge

Qgs

P-Channel

N-Ch

P-Ch

2.2

nC

P-Channel

VDS = –4 V, VGS = –5 V, ID = –5.0 A

N-Ch

4

Gate-Drain Charge

Qgd

N-Ch

P-Ch

3

N-Ch

15

25

Turn-On Delay Time

td(on)

N-Ch

P-Ch

21

40

N-Channel

VDD = 15 V, RL = 15 W

N-Ch

8

15

Rise Time

tr

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

N-Ch

P-Ch

45

70

P-Channel

W

N-Ch

35

55

Turn-Off Delay Time

td(off)

VDD = –4 V, RL = 4 W

I

^ –1 A, V

= –4.5 V, R = 6

W

N-Ch

P-Ch

60

100

ns

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

N-Ch

10

20

Fall Time

tf

N-Ch

P-Ch

55

85

m

N-Ch

30

60

Source-Drain Reverse Recovery Time

trr

IF = 1.8 A, di/dt = 100 A/ms

N-Ch

P-Ch

50

100

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

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