SI7880DP datasheet(2/5 Pages) VISHAY

Part #	SI7880DP

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si7880DP

Vishay Siliconix

www.vishay.com

2

Document Number: 71875

S-03768—Rev. B, 21-Apr-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 29 A

0.0025

0.0030

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 25 A

0.0035

0.00425

W

Forward Transconductancea

gfs

VDS = 6 V, ID = 29 A

90

S

Diode Forward Voltagea

VSD

IS = 4.5 A, VGS = 0 V

0.68

1.1

V

Dynamicb

Total Gate Charge

Qg

40.5

60

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 29 A

18

nC

Gate-Drain Charge

Qgd

10.5

Gate Resistance

Rg

1.2

W

Turn-On Delay Time

td(on)

30

50

Rise Time

tr

VDD = 15 V, RL = 15 W

15

25

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

110

200

ns

Fall Time

tf

35

60

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

55

80

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

10

20

30

40

50

60

012345

VGS = 10 thru 4 V

25

_C

TC = 125_C

-55

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

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