EMI4193

www.onsemi.com

3

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Channel Leakage Current

1.0

mA

Channel Negative Voltage

0.1

1.5

V

Channel Input Capacitance to Ground

(Pins 1,2,4,5,7,8 to Pins 3,6,11,14)

0.8

1.3

pF

Channel Resistance

(Pins 1−16, 2−15, 4−13, 5−12, 7−10 & 8−9)

3.5

5.0

W

Differential Mode Cut−off Frequency

50

W Source and Load Termination

4.0

GHz

Common Mode Stop Band Attenuation

@ 900 MHz

16

dB

Common Mode Impedance

@ 100 MHz

32

W

In−system ESD Withstand Voltage

a) Contact discharge per IEC 61000−4−2

standard, Level 4 (External Pins)

b) Contact discharge per IEC 61000−4−2

standard, Level 1 (Internal Pins)

(Notes 1 and 2)

±15

±2

kV

TLP Clamping Voltage

(See Figure 9)

12

18

−6

−12

V

V

V

V

Dynamic Resistance

Positive Transients

Negative Transients

Any I/O pin to Ground;

Notes 1 and 3

1.36

0.6

Reverse Working Voltage

(Note 3)

5.0

V

Breakdown Voltage

5.6

9.0

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. These measurements performed with no external capacitor.

or continuous peak operating voltage level.