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EMI4193MTTAG Datasheet(PDF) 3 Page - ON Semiconductor |
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EMI4193MTTAG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 9 page EMI4193 www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit ILEAK Channel Leakage Current TA = 25°C, VIN = 5 V, GND = 0 V 1.0 mA VF Channel Negative Voltage TA = 25°C, IF = 10 mA 0.1 1.5 V CIN Channel Input Capacitance to Ground (Pins 1,2,4,5,7,8 to Pins 3,6,11,14) TA = 25°C, At 1 MHz, GND = 0 V, VIN = 1.65 V 0.8 1.3 pF RCH Channel Resistance (Pins 1−16, 2−15, 4−13, 5−12, 7−10 & 8−9) 3.5 5.0 W f3dB Differential Mode Cut−off Frequency 50 W Source and Load Termination 4.0 GHz Fatten Common Mode Stop Band Attenuation @ 900 MHz 16 dB ZC Common Mode Impedance @ 100 MHz 32 W VESD In−system ESD Withstand Voltage a) Contact discharge per IEC 61000−4−2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000−4−2 standard, Level 1 (Internal Pins) (Notes 1 and 2) ±15 ±2 kV VCL TLP Clamping Voltage (See Figure 9) Forward IPP = 8 A Forward IPP = 16 A Forward IPP = −8 A Forward IPP = −16 A 12 18 −6 −12 V V V V RDYN Dynamic Resistance Positive Transients Negative Transients TA = 25°C, IPP = 1 A, tP = 8/20 ms Any I/O pin to Ground; Notes 1 and 3 1.36 0.6 VRWM Reverse Working Voltage (Note 3) 5.0 V VBR Breakdown Voltage IT = 1 mA; (Note 4) 5.6 9.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 4. VBR is measured at pulse test current IT. |
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