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SIW3500DIF1 Datasheet(PDF) 10 Page - RF Micro Devices

Part # SIW3500DIF1
Description  ULTIMATEBLUE
Download  18 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SIW3500DIF1 Datasheet(HTML) 10 Page - RF Micro Devices

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Preliminary
14-46
SiW3500
60 0066 R00Hrf SiW3500 Radio Processor DS
System Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
ESD Rating
Electrical Characteristics
DC Specification (TOP=+25°C, VDD_P=3.0V)
AC Characteristics (TOP=+25°C, VDD_P=3.0V, CLOAD=15pF)
Parameter
Description
Min
Max
Unit
VDD_C
Digital circuit supply voltage
-0.3
3.63
V
VCC
Analog circuit supply voltage
-0.3
3.63
V
VDD_P, VDD_P_ALT
I/O supply voltage
-0.3
3.63
V
VBATT_ANA
Analog regulator supply voltage
-0.3
3.63
V
VBATT_DIG
Digital regulator supply voltage
-0.3
3.63
V
TST
Storage temperature
-55
+125
°C
RFMAX
Maximum RF input level
+5
dBm
Note: Absolute maximum ratings indicate limits beyond which the useful life of the device may be impaired or damage may occur.
Parameter
Description
Min
Max
Unit
TOP
Operating temperature (industrial grade)
-40
+85
°C
TEOP
Extended operating temperature1
-40
+105
°C
VBATT_ANA
Unregulated supply voltage into internal analog regulator
2.3
3.63
V
VBATT_DIG
Unregulated supply voltage into internal digital regulator
2.3
3.63
V
VCC
Regulated supply voltage directly into analog circuits
1.71
1.89
V
VDD_C
Regulated supply voltage directly into digital circuits
1.62
1.98
V
VDD_P , VDD_P_ALT
Digital interface I/O supply voltage
1.62
3.63
V
1.The extended operating temperature range applies to special order devices qualified for extended operating range. Please contact factory for details.
Symbol
Description
Rating
ESD
ESD protection - all pins
2000 V
Note: This device is a high performance RF integrated circuit with an ESD rating of 2,000 volts (HBM conditions per Mil-Std-883, Method 3015).
Handling and assembly of this device should only be done using appropriate ESD controlled processes.
Symbol
Description
Min.
Typ
Max.
Unit
VIL
Input low voltage
GND-0.1
0.3.VDD_P
V
VIH
Input high voltage
0.7.VDD_P
VDD_P
V
VOL
Output low voltage
GND
0.2.VDD_P
V
VOH
Output high voltage
0.8.VDD_P
VDD_P
V
IOH
Output high current
1
mA
IOL
Output low current
1
mA
IILI
Input leakage current
1
µA
Symbol
Description
Typ
Max.
Unit
tr
Rise time
5
11
ns
tf
Fall time
5
8
ns


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