SUD23N06-31L datasheet(2/4 Pages) VISHAY

Part #	SUD23N06-31L

Description	N-Channel 60-V (D-S), 175C MOSFET, Logic Level

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Manufacturer	VISHAY [Vishay Siliconix]

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SUD23N06-31L

Vishay Siliconix

www.vishay.com

2

Document Number: 72145

S-03536—Rev. A, 24-Mar-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

2.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 48 V, VGS = 0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 48 V, VGS = 0 V, TJ = 125_C

50

mA

g

DSS

VDS = 48 V, VGS = 0 V, TJ = 175_C

250

m

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

50

A

VGS = 10 V, ID = 15 A

0.025

0.031

Drain Source On State Resistanceb

rDS( )

VGS = 10 V, ID = 15 A, TJ = 125_C

0.055

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 10 V, ID = 15 A, TJ = 175_C

0.069

W

VGS = 4.5 V, ID = 10 A

0.037

0.045

Forward Transconductanceb

gfs

VDS = 15 V, ID = 15 A

20

S

Dynamic

Input Capacitance

Ciss

670

Output Capacitance

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

140

pF

Reverse Transfer Capacitance

Crss

60

Total Gate Chargec

Qg

11

17

Gate-Source Chargec

Qgs

VDS = 30 V, VGS = 10 V, ID = 23 A

3

nC

Gate-Drain Chargec

Qgd

DS

,

GS

, D

3

Turn-On Delay Timec

td(on)

8

15

Rise Timec

tr

VDD = 30 V, RL = 1.3 W

15

25

ns

Turn-Off Delay Timec

td(off)

VDD

30 V, RL

1.3

W

ID ^ 23 A, VGEN = 10 V, RG = 2.5 W

30

45

ns

Fall Timec

tf

25

40

Source-Drain Diode Ratings and Characteristics (TC = 25_C)

Pulsed Current

ISM

50

A

Diode Forward Voltage

VSD

IF = 15 A, VGS = 0 V

1.0

1.5

V

Reverse Recovery Time

trr

IF = 15 A, di/dt = 100 A/ms

30

60

ns

Notes:

b.

For design aid only; not subject to production testing.

c.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

d.

Independent of operating temperature.

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