SE3080

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=1mH,Rg=25Ω

Symbol

Parameter

Test Conditions

Min Typ

Max Units

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Zero Gate Voltage Drain Current

1

μ

A

Gate-Body leakage current

±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1

1.5

3

V

Static Drain-Source On-Resistance2

5.5

7.5

mΩ

7.5

10

mΩ

Forward Transfer Admittance

20

S

DYNAMIC CHARACTERISTICS (Note 4)

Input Capacitance

2330

pF

Output Capacitance

460

pF

Reverse Transfer Capacitance

230

pF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

20

nS

Turn-on Rise Time

15

nS

Turn-off Delay Time

60

nS

Turn-off fall Time

10

nS

Total Gate Charge

51

nC

Gate-Source Charge

14

nC

Gate-Drain Charge

11

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage(Notes 3)

1.2

V

Diode Forward Current(Notes 2)

80

A

Reverse Recovery Time

TJ=25℃,IF=80A

di/dt=100A/μS(Note 3)

32

50

nS

Reverse Recovery Charge

12

20

nC

WILLAS

WILLAS ELECTRONIC CORP.

2012-07