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UNR212X Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UNR212X Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 7 page UNR212x Series 2 SJH00008CED Parameter Symbol Conditions Min Typ Max Unit Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −5 mA − 0.25 V UNR212X/212Y IC = −10 mA, IB = − 0.3 mA Output voltage high-level VOH VCC = −5 V, V B = − 0.5 V, R L = 500 Ω−4.9 V Output voltage low-level VOL VCC = −5 V, VB = −3.5 V, RL = 500 Ω− 0.2 V Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz Input resistance UNR2121/2124 R1 −30% 2.2 +30% k Ω UNR2122 4.7 UNR2123 10 UNR212X 0.27 UNR212Y 3.1 Resistance ratio R1/R2 0.8 1.0 1.2 UNR2124 0.17 0.22 0.27 UNR212X 0.043 0.054 0.065 UNR212Y 0.53 0.67 0.81 ■ Electrical Characteristics (continued) T a = 25°C ± 3°C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 0 50 100 150 200 250 0 40 80 120 160 Ambient temperature T a (°C) |
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