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UNR212X Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part # UNR212X
Description  Silicon PNP epitaxial planar type
Download  7 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UNR212X Datasheet(HTML) 2 Page - Panasonic Semiconductor

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UNR212x Series
2
SJH00008CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter saturation voltage
VCE(sat)
IC = −100 mA, IB = −5 mA
− 0.25
V
UNR212X/212Y
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
VOH
VCC
= −5 V, V
B
= − 0.5 V, R
L
= 500 Ω−4.9
V
Output voltage low-level
VOL
VCC = −5 V, VB = −3.5 V, RL = 500 Ω− 0.2
V
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
200
MHz
Input resistance UNR2121/2124
R1
−30%
2.2
+30%
k
UNR2122
4.7
UNR2123
10
UNR212X
0.27
UNR212Y
3.1
Resistance ratio
R1/R2
0.8
1.0
1.2
UNR2124
0.17
0.22
0.27
UNR212X
0.043
0.054
0.065
UNR212Y
0.53
0.67
0.81
■ Electrical Characteristics (continued) T
a = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
0
50
100
150
200
250
0
40
80
120
160
Ambient temperature T
a (°C)


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