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28C011TRT4F Datasheet(PDF) 1 Page - Maxwell Technologies |
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28C011TRT4F Datasheet(HTML) 1 Page - Maxwell Technologies |
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1 / 19 page  1 All data sheets are subject to change without notice (858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com 1 Megabit (128K x 8-Bit) EEPROM 28C011T ©2003 Maxwell Technologies All rights reserved. 11.10.03 REV 10 FEATURES: • 128k x 8-bit EEPROM •RAD-PAK® radiation-hardened against natural space radia- tion • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode • Package: - 32-pin RAD-PAK® flat package - 32-pin Rad-Tolerant flat package - JEDEC-approved byte-wide pinout • High speed: - 120, 150, and 200 ns maximum access times available • High endurance: - 10,000 erase/write (in Page Mode), - 10 year data retention • Page write mode: - 1 to 128 bytes • Low power dissipation - 20 mW/MHz active (typical) - 110 µ W standby (maximum) DESCRIPTION: Maxwell Technologies’ 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the comple- tion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in addi- tion to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK® packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. High Voltage Generator Control Logic Timing Address Buffer and Latch Y Decoder X Decoder Y Gating Memory Array I/O Buffer and Input Latch Data Latch V CC V SS RES OE CE WE RES A0 A6 A7 A16 I/O0 I/O7 RDY/Busy Logic Diagram 28C011T |
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