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TCET1200G1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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TCET1200G1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 12 page TCET120.(G) up to TCET2200 Vishay Semiconductors www.vishay.com Document Number 83501 Rev. A2, 08–Feb–01 3 (12) Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 ms IFSM 1.5 A Power dissipation Tamb ≤ 25°C PV 100 mW Junction temperature Tj 125 °C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Tamb ≤ 25°C PV 150 mW Junction temperature Tj 125 °C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) VIO 5 kV Total power dissipation Tamb ≤ 25°C Ptot 250 mW Operating ambient temperature range Tamb –40 to +100 °C Storage temperature range Tstg –55 to +125 °C Soldering temperature 2 mm from case t ≤ 10 s Tsd 260 °C |
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