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JDV2S01E Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # JDV2S01E
Description  Diode Silicon Epitaxial Planar Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

JDV2S01E Datasheet(HTML) 1 Page - Toshiba Semiconductor

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JDV2S01E
2002-01-16
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
· Small Package
· High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
· Low Series Resistance: rs = 0.5 Ω (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 mA
10
¾
¾
V
Reverse current
IR
VR = 10 V
¾
¾
3
nA
C1V
VR = 1 V, f = 1 MHz
2.85
3.15
3.45
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.35
1.57
1.81
pF
Capacitance ratio
C1V/C4V
¾
1.8
2
¾
¾
Series resistance
rs
VR = 1 V, f = 470 MHz
¾
0.5
0.7
W
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g
F A


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