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3

IRHM57260

Parameter

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

200

—

200

—

V

Gate Threshold Voltage

2.0

4.0

1.25

4.0

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

10

—

25

µA

Static Drain-to-Source

➃

—

0.044

—

0.045

Ω

On-State Resistance (TO-3)

Static Drain-to-Source

➃

—

0.049

—

0.050

Ω

On-State Resistance (TO-254)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHM57260, IRHM53260 and IRHM54260

2. Part number IRHM58260

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

➃

—

1.2

—

1.2

V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy

Range

V

DS

(V)

(MeV)

(µm)

@V

GS

=0V @V

GS

=-5V @V

GS

=-10V @V

GS

=-15V @V

GS

=-20V

Br

36.7

309

39.5

200

200

150

100

50

I

59.8

341

32.5

200

100

40

35

30

Au

82.3

350

28.4

50

35

25

—

—

0

50

100

150

200

250

0

-5

-10

-15

-20

VGS

Br

I

Au