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NTB45N06T4 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTB45N06T4
Description  Power MOSFET 45 Amps, 60 Volts N?밅hannel TO??20 and D2PAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTB45N06T4 Datasheet(HTML) 2 Page - ON Semiconductor

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NTP45N06, NTB45N06
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient (Note 3.)
– Junction–to–Ambient (Note 4.)
R
θJC
R
θJA
R
θJA
1.2
46.8
63.2
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 5.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
70
57
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
±100
nAdc
ON CHARACTERISTICS (Note 5.)
Gate Threshold Voltage (Note 5.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
7.2
4.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (Note 5.)
(VGS = 10 Vdc, ID = 22.5 Adc)
RDS(on)
21
26
mOhm
Static Drain–to–Source On–Voltage (Note 5.)
(VGS = 10 Vdc, ID = 45 Adc)
(VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150°C)
VDS(on)
0.93
0.93
1.4
Vdc
Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc)
gFS
16.6
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
1224
1725
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
345
485
Transfer Capacitance
f = 1.0 MHz)
Crss
76
160
SWITCHING CHARACTERISTICS (Note 6.)
Turn–On Delay Time
td(on)
10
25
ns
Rise Time
(VDD = 30 Vdc, ID = 45 Adc,
tr
101
200
Turn–Off Delay Time
(VDD 30 Vdc, ID 45 Adc,
VGS = 10 Vdc, RG = 9.1 Ω) (Note 5.)
td(off)
33
70
Fall Time
tf
106
220
Gate Charge
(V
48 Vd
I
45 Ad
QT
33
46
nC
(VDS = 48 Vdc, ID = 45 Adc,
VGS = 10 Vdc) (Note 5.)
Q1
6.4
VGS = 10 Vdc) (Note 5.)
Q2
15
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 45 Adc, VGS = 0 Vdc) (Note 5.)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.08
0.93
1.2
Vdc
Reverse Recovery Time
(I
45 Ad
V
0 Vd
trr
53.1
ns
(IS = 45 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 5.)
ta
36
dIS/dt = 100 A/µs) (Note 5.)
tb
16.9
Reverse Recovery Stored Charge
QRR
0.087
µC
3. When surface mounted to an FR4 board using 1
″ pad size, (Cu Area 1.127 in2).
4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
5. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.


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