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NTB45N06T4 Datasheet(PDF) 2 Page - ON Semiconductor |
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NTB45N06T4 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTP45N06, NTB45N06 http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Thermal Resistance – Junction–to–Case – Junction–to–Ambient (Note 3.) – Junction–to–Ambient (Note 4.) R θJC R θJA R θJA 1.2 46.8 63.2 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 5.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 60 – 70 57 – – Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS – – – – 1.0 10 µAdc Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ±100 nAdc ON CHARACTERISTICS (Note 5.) Gate Threshold Voltage (Note 5.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 – 2.8 7.2 4.0 – Vdc mV/ °C Static Drain–to–Source On–Resistance (Note 5.) (VGS = 10 Vdc, ID = 22.5 Adc) RDS(on) – 21 26 mOhm Static Drain–to–Source On–Voltage (Note 5.) (VGS = 10 Vdc, ID = 45 Adc) (VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150°C) VDS(on) – – 0.93 0.93 1.4 – Vdc Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc) gFS – 16.6 – mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0 Vd Ciss – 1224 1725 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss – 345 485 Transfer Capacitance f = 1.0 MHz) Crss – 76 160 SWITCHING CHARACTERISTICS (Note 6.) Turn–On Delay Time td(on) – 10 25 ns Rise Time (VDD = 30 Vdc, ID = 45 Adc, tr – 101 200 Turn–Off Delay Time (VDD 30 Vdc, ID 45 Adc, VGS = 10 Vdc, RG = 9.1 Ω) (Note 5.) td(off) – 33 70 Fall Time tf – 106 220 Gate Charge (V 48 Vd I 45 Ad QT – 33 46 nC (VDS = 48 Vdc, ID = 45 Adc, VGS = 10 Vdc) (Note 5.) Q1 – 6.4 – VGS = 10 Vdc) (Note 5.) Q2 – 15 – SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 45 Adc, VGS = 0 Vdc) (Note 5.) (IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C) VSD – – 1.08 0.93 1.2 – Vdc Reverse Recovery Time (I 45 Ad V 0 Vd trr – 53.1 – ns (IS = 45 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) (Note 5.) ta – 36 – dIS/dt = 100 A/µs) (Note 5.) tb – 16.9 – Reverse Recovery Stored Charge QRR – 0.087 – µC 3. When surface mounted to an FR4 board using 1 ″ pad size, (Cu Area 1.127 in2). 4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). 5. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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