June 1998

FDR4420A

Single N-Channel, Logic Level, PowerTrench

General Description

Features

Symbol

Parameter

FDR4420A

Units

V

DSS

Drain-Source Voltage

30

V

V

GSS

Gate-Source Voltage

±20

V

I

D

Draint Current

- Continuous

(Note 1a)

11

A

- Pulsed

40

P

D

Maximum Power Dissipation

(Note 1a)

1.8

W

(Note 1b)

1

(Note 1c)

0.9

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

70

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

20

°C/W

FDR4420 Rev.D

11 A, 30 V. R

R

Fast switching speed.

Low gate charge.

Small footprint 38% smaller than a standard SO-8.

Low profile package(1mm thick).

Power handling capability similar to SO-8.

The SuperSOT-8 family of N-Channel Logic Level MOSFETs

have been designed to provide a low profile, small footprint

alternative to industry standard SO-8 little foot type product.

These MOSFETs are produced using Fairchild Semiconductor's

advanced PowerTrench process that has been

tailored to

minimize the on-state resistance and yet maintain superior

switching performance.

These devices are well suited for low voltage and battery

powered applications

where small package size is required

without compromising power handling and fast switching.

SOT-23

SuperSOT

SOIC-16

SO-8

SOT-223

SuperSOT

1

5

6

7

8

4

3

2

D

S

D

D

S

D

D

G

SuperSOT -8

TM

pin 1

4420A

© 1998 Fairchild Semiconductor Corporation