1

PNA1601M (PN166)

Silicon NPN Phototransistor

For optical control systems

Features

High sensitivity

Wide spectral sensitivity, suited for detecting various kinds of LEDs

Ultraminiature, thin side-view type package

Phototransistors

(Input pulse)

(Output pulse)

50

Ω

increase from 10% to 90% of its final value)

decrease from 90% to 10% of its initial value)

Sig.OUT

10%

90%

Sig.IN

2.6

±0.2

1.2

±0.2

0.8

C0.5

R0.55

(0.4)

1.4

±0.2

Unit : mm

1: Collector

2: Emitter

2-0.45

2-0.7

0.15

2.0

21

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

Collector to emitter voltage

20

V

Collector current

20

mA

Collector power dissipation

50

mW

Operating ambient temperature

–25 to +65

˚C

Storage temperature

–30 to +85

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Dark current

0.2

µA

Sensitivity to infrared emitters

3

µA

Peak sensitivity wavelength

λ

P

850

nm

Acceptance half angle

θ

Measured from the optical axis to the half power point

35

deg.

Rise time

4

µs

Fall time

4

µs

Collector saturation voltage

0.5

V

λ = 940 nm) as a light source.

Note) The part number in the parenthesis shows conventional part number.