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SGB02N120 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SGB02N120 Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 12 page  Preliminary SGP02N120 SGB02N120, SGD02N120 Power Semiconductors 6 Mar-00 0A 2A 4A 6A 8A 10ns 100ns t r t d(on) t f t d(off) 0 Ω 50 Ω 100 Ω 150 Ω 10ns 100ns t r t d(on) t f t d(off) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150 °C, V CE = 800V, VGE = +15V/0V, RG = 9 1 Ω) Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150 °C, V CE = 800V, VGE = +15V/0V, IC = 2A) -50°C 0°C 50°C 100°C 150°C 10ns 100ns t r t d(on) t f t d(off) -50°C 0°C 50°C 100°C 150°C 0V 1V 2V 3V 4V 5V 6V typ. min. max. Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1 Ω) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) |
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Similar Description - SGB02N120 |
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