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SGB02N120 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SGB02N120
Description  Fast S-IGBT in NPT-technology
Download  12 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGB02N120 Datasheet(HTML) 1 Page - Infineon Technologies AG

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Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
1
Mar-00
Fast S-IGBT in NPT-technology
G
C
E
• 40% lower E
off compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
VCE
IC
Eoff
Tj
Package
Ordering Code
SGP02N120
1200V
2A
0.11mJ
150
°C
TO-220AB
Q67040-S4270
SGB02N120
TO-263AB(D2PAK)
Q67040-S4271
SGD02N120
TO-252AA(DPAK)
Q67040-S4269
SGI02N120
TO-262
Q67040-S4291
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25
°C
TC = 100
°C
I C
6.2
2.8
Pulsed collector current, tp limited by Tjmax
I Cp ul s
9.6
Turn off safe operating area
VCE
≤ 1200V, T
j
≤ 150°C
-
9.6
A
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 2A, VCC = 50V, RGE = 25
Ω, start at T
j = 25
°C
EAS
10
mJ
Short circuit withstand time
1)
VGE = 15V, 100V
≤ V
CC
≤ 1200V, T
j
≤ 150°C
t SC
10
µs
Power dissipation
TC = 25
°C
Ptot
62
W
Operating junction and storage temperature
T j , T stg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.


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