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MIG50Q201H Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MIG50Q201H
Description  High Power Switching Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MIG50Q201H Datasheet(HTML) 2 Page - Toshiba Semiconductor

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MIG50Q201H
2001-05-29
2
Maximum Ratings (Tj = 25°C )
Stage
Characteristic
Condition
Symbol
Ratings
Unit
Supply voltage
P-N power terminal
VCC
900
V
Collector−emitter voltage
―
VCES
1200
V
Collector current
Tc = 25°C, DC
IC
50
A
Forward current
Tc = 25°C, DC
IF
50
A
Collector power dissipation
Tc = 25°C
PC
300
W
Inverter
Junction temperature
―
Tj
150
°C
Supply voltage
P−N power terminal
VCC
900
V
Collector−emitter voltage
―
VCES
1200
V
Collector current
Tc = 25°C, DC
IC
25
A
Reverse voltage
―
VR
1200
V
Forward current
Tc = 25°C, DC
IF
25
A
Collector power dissipation
Tc = 25°C
PC
140
W
Brake
Junction temperature
―
Tj
150
°C
Control supply voltage
VD−GND terminal
VD
20
V
Input voltage
IN−GND terminal
VIN
20
V
Fault output voltage
FO−GND (L) terminal
VFO
20
V
Control
Fault output current
FO sink current
IFO
14
mA
Operating temperature
―
TC
−20 ~ +100
°C
Storage temperature range
―
Tstg
−40 ~ +125
°C
Isolation voltage
AC 1 minute
VISO
2500
V
Module
Screw torque
M5
―
3
Nm
Electrical Characteristics
a.
Inverter Stage
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Tj = 25°C
―
―
1
Collector cut−off current
ICEX
VCE = 1200V
Tj = 125°C
―
―
10
mA
Tj = 25°C
―
2.6
3.5
Collector−emitter saturation voltage
VCE (sat)
VD = 15 V,
IC = 50 A
VIN = 15 V → 0 V
Tj = 125°C
―
2.5
―
V
Forward voltage
VF
IF = 50A
―
2.0
2.8
V
ton
―
1.0
1.7
tc (on)
―
0.4
0.8
trr
―
0.16
0.21
toff
―
1.9
2.6
Switching time
tc (off)
VCC = 600 V, IC = 50 A
VD = 15 V, VIN = 15 V
0 V
Inductive load
(Note 1)
―
0.35
0.6
µs


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