BUK9E06-55A datasheet(2/16 Pages) ETC

Part #	BUK9E06-55A

Description	TrenchMOS logic level FET

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Philips Semiconductors

BUK9506-55A; BUK9606-55A;

BUK9E06-55A

Product data

Rev. 03 — 23 July 2001

2 of 16

9397 750 08416

5.

Quick reference data

6.

Limiting values

[1]

Current is limited by power dissipation chip rating

[2]

Continuous current is limited by package

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

VDS

drain-source voltage (DC)

−

55

V

ID

drain current (DC)

Tmb =25 °C; VGS =5V

[1]

−

154

A

Ptot

total power dissipation

Tmb =25 °C

−

300

W

Tj

junction temperature

−

175

°C

RDSon

drain-source on-state resistance

Tj =25 °C; VGS =5V; ID = 25 A

5.3

6.3

m

Ω

Tj =25 °C; VGS = 4.5 V; ID = 25 A

5.5

6.7

m

Ω

Tj =25 °C; VGS = 10 V; ID = 25 A

4.8

5.8

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

−

55

V

VDGR

drain-gate voltage (DC)

RGS =20kΩ−

55

V

VGS

gate-source voltage (DC)

−±15

V

ID

drain current (DC)

Tmb =25 °C; VGS =5V;

Figure 2 and 3

[1]

−

154

A

[2]

−

75

A

Tmb = 100 °C; VGS =5V; Figure 2

[2]

−

75

A

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs;

Figure 3

−

616

A

Ptot

total power dissipation

Tmb =25 °C; Figure 1

−

300

W

Tstg

storage temperature

−55

+175

°C

Tj

operating junction temperature

−55

+175

°C

Source-drain diode

IDR

reverse drain current (DC)

Tmb =25 °C

[1]

−

154

A

[2]

−

75

A

IDRM

pulsed reverse drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs

−

616

A

Avalanche ruggedness

WDSS

non-repetitive avalanche energy

unclamped inductive load; ID =75A;

VDS ≤ 55 V; VGS =5V; RGS =50 Ω;

starting Tmb =25 °C

−

1.1

J

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