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BUK95R2-40B Datasheet(PDF) 8 Page - List of Unclassifed Manufacturers |
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BUK95R2-40B Datasheet(HTML) 8 Page - List of Unclassifed Manufacturers |
8 / 15 page Philips Semiconductors BUK95/963R2-40B TrenchMOS™ logic level FET Product data Rev. 03 — 16 January 2003 8 of 15 9397 750 10844 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ID = 1 mA; VDS =VGS Tj =25 °C; VDS =VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj =25 °C; VDS =25V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03ng52 0.0 0.5 1.0 1.5 2.0 2.5 -60 0 60 120 180 Tj (ºC) VGS(th) (V) max typ min 03ng53 10-6 10-5 10-4 10 -3 10-2 10-1 0 0.5 1 1.5 2 2.5 3 VGS (V) ID (A) max typ min 03nh53 0 50 100 150 200 020 40 60 ID (A) gfs (S) 03nh58 0 2000 4000 6000 8000 10000 12000 14000 10-1 1 10 102 VDS (V) C (pF) Ciss Coss Crss |
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