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please contact the National Semiconductor Sales

OfficeDistributors for availability and specifications

Supply Voltage

70V

Input Voltage

55V

Output Voltage

55V

Storage Temperature

b

Maximum Power Dissipation at 25 C

Cavity Package

1509 mW

Molded Package

1476 mW

Lead Temperature (Soldering 4 sec)

260 C

Derate cavity package 101 mW C above 25 C derate molded package

118 mW C above 25 C

Operating Conditions

Min

Max

Units

DS7833DS7835

45

55

V

DS8833DS8835

475

525

V

DS7833DS7835

b

55

a

125

C

DS8833DS8835

0

a

70

C

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DISABLEDRIVER INPUT

High Level Input Voltages

20

V

Low Level Input Voltage

DS7833 DS8833 DS8835

08

V

DS7835

07

High Level Input Current

40

m

A

10

mA

Low Level Input Current

b

10

b

16

mA

Input Clamp Diode

b

08

b

15

V

Driver Low Level Disabled

b

40

m

A

Input Current

RECEIVER INPUTBUS OUTPUT

High Level Threshold Voltage

DS7833 DS7835

14

175

21

V

DS8833 DS8835

15

175

20

V

Low Level Threshold Voltage

DS7833 DS7835

08

135

16

V

DS8833 DS8835

08

135

15

V

Bus Current Output Disabled

25

80

m

A

or High

50

80

m

A

b

20

b

40

m

A

Logic ‘‘1’’ Output Voltage

DS7833 DS7835

24

275

V

24

275

V

Logic ‘‘0’’ Output Voltage

028

05

V

04

V

Output Short Circuit Current

b

40

b

62

b

120

mA

RECEIVER OUTPUT

Logic ‘‘1’’ Output Voltage

DS7833 DS7835

24

30

V

DS8833 DS8835

24

29

V

Logic ‘‘0’’ Output Voltage

022

04

V

Output Disabled Current

40

m

A

b

40

m

A

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