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EPC111 Datasheet(PDF) 10 Page - Espros Photonics corp |
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EPC111 Datasheet(HTML) 10 Page - Espros Photonics corp |
10 / 14 page epc111/112 High speed detection rate design Figure 11 shows the epc 112 as an example in a high speed detection rate light barrier application with minimal part count. This design is optimized for a fast reading of light beam interruptions. Whereas the working principle is similar to the above example. This driver circuit operates with a VDDLED in a range of 6 to 20 VDC. The epc112 device is designed to operate at 3.3V power supply (VDD and VDD33). OUTH LED OUTN PD VDD33 VDD epc112 GND VDD18 R2 13R C1 10μF Low ESR GND +3.3V VDD LED = +12V OUTH OUTN PD epc300 R6 3k6 R5 10k R1 47R C3 100nF C2 1μF C5 4.7nF C4 100nF R7 12k R9 10k R8 4k7 Marked conductors must be short and low ohmic IR LED TSML1000 C2 The epc112 device with its very sensitive input PD needs a well decoupled power supply T3 BC846B T1 BC846B R3 10k T2 BC856 R4 1k Figure 11: High speed detection rate light barrier application with minimal part count Notice: The schematic is for illustrating the basic circuit idea only. For the real built up the designer has to take all other additional influence factors in consideration too eg. design rules, power rating, heat dissipation, ... Design Precautions: EMC shielding The sensitivity at pin PD is very high in order to achieve a long operation range of light barriers even without lenses in front of the IR LED and/or the photo diode. Thus, the pin PD is very sensitive to EMI. Special care should be taken to keep the PCB track at pin PD as short as possible (a few mm only!). This track should be kept away from the IR LED signal tracks and from other sources which may induce unwanted signals. It is strongly recommended to cover the chip, the photodiode and all passive components around the chip with a metal shield. A recommended part is shown in Figure 12. The pins at the bottom are to solder the shield to the PCB with electrical connection to GND. The hole in the front is the opening window for the photo diode. The backside of the PCB below the sensitive area (PD, epc111 or epc112) shall be a polygon connected to GND to shield the circuit from the backside as well. Ambient Light Photodiode DC current can be generated by ambient light, e.g. sunlight. DC current at pin PD does not generate a DC output signal. However, if IPDDC is above the stated maximal value, the input is saturated. This blocks the detection of AC current pulses. Photodiode Capacitance If the photo diode capacity is above the specified value, a lower detection sensitivity and a possible higher sensitivity spread results. © 2013 ESPROS Photonics Corporation Characteristics subject to change without notice 10 Datasheet epc111_112 - V2.5 www.espros.ch Figure 12: Recommended EMC shield |
Similar Part No. - EPC111_17 |
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Similar Description - EPC111_17 |
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