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01/99 D-5 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ71 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Gate, 3 Drain, 5 Source, 6 Gate, 7 Drain At 25°C free air temperature: IFN146 Process NJ450 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 40 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 1 nA VGS = – 30V, VDS = ØV – 1 µA VGS = – 30V, VDS = ØV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 1.2 V VDS = 10V, ID = 1 µA Drain Saturation Current (Pulsed) IDSS 30 mA VDS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source gfs 30 40 mS VDS = 10V, VGS = ØV f = 1 kHz Forward Transconductance IDSS = 5 mA Common Source Input Capacitance Ciss 75 pF VDS = 10V, VGS = ØV f = 1 kHz Common Source Reverse Crss 15 pF VDS = 10V, ID = ØA f = 1 kHz Transfer Capacitance Noise Figure NF 1 dB VDS = 10V, ID = 5 mA f = 1 kHz RG = 100Ω Differential Gate Source Voltage |VGS1– VGS2| 20 mV VDS = 10V, ID = 5 mA ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page D-5 |
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