Parameter

Max.

Units

210

†

150

†

A

Pulsed Drain Current



850

Power Dissipation

330

W

Linear Derating Factor

2.2

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

460

mJ

Avalanche Current



See Fig.12a, 12b, 15, 16

A

Repetitive Avalanche Energy

‡

mJ

Operating Junction and

-55 to + 175

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

utilizes the lastest processing techniques to achieve extremely low on-resistance

per silicon area. Additional features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other applications.

S

D

G

Absolute Maximum Ratings

†

Description

08/07/02

www.irf.com

1

●

Advanced Process Technology

●

Ultra Low On-Resistance

●

Dynamic dv/dt Rating

●

175°C Operating Temperature

●

Fast Switching

●

Repetitive Avalanche Allowed up to Tjmax

Features

Typical Applications

●

Electric Power Steering

●

14 Volts Automotive Electrical Systems

AUTOMOTIVE MOSFET

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.45

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

TO-220AB

IRF2204

PD - 94434