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IRFM250 Datasheet(PDF) 1 Page - International Rectifier |
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IRFM250 Datasheet(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 27.4 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 17 IDM Pulsed Drain Current ➀ 110 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 500 mJ IAR Avalanche Current ➀ 27.4 A EAR Repetitive Avalanche Energy ➀ 15.0 mJ dv/dt Peak Diode Recovery dv/dt ➂ 5.0 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 9.3 (Typical) g PD - 90554E HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- ing power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. oC A POWER MOSFET THRU-HOLE (TO-254AA) 1/9/01 www.irf.com 1 TO-254AA Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight For footnotes refer to the last page IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET ® MOSFETTECHNOLOGY |
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