NTE159M datasheet(3/4 Pages) NTE

Part #	NTE159M

Description	Silicon Complementary Transistors General Purpose

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

ON Characteristics (Cont’d)

Base–Emitter Saturation Voltage

NTE123A

VBE(sat)

IC = 150mA, IB = 15mA, Note 1

0.6

–

1.2

V

IC = 500mA, IB = 50mA, Note 1

–

2.0

V

NTE159M

IC = 150mA, IB = 15mA, Note 1

–

1.3

V

IC = 500mA, IB = 50mA

–

2.6

V

Small–Signal Characteristics

Current Gain–Bandwidth Product

NTE123A

fT

IC = 20mA

VCE = 20V, f = 100MHz,

300

–

MHz

NTE159M

IC = 50mA

Note 2

200

–

MHz

Output Capacitance

Cobo

VCB = 10V, IE = 0, f = 100kHz

–

8

pF

Input Capactiance

NTE123A

Cibo

VBE = 0.5V IC = 0, f = 100kHz

–

25

pF

NTE159M

VBE = 2V

–

30

pF

Input Impedance (NTE123A Only)

hie

IC = 1mA

VCE = 10V, f = 1kHz

2.0

–

8.0

k

Ω

IC = 10mA

0.25

–

1.25

k

Ω

Voltage Feedback Ratio

hre

IC = 1mA

VCE = 10V, f = 1kHz

–

8

x 10–4

(NTE123A Only)

IC = 10mA

–

4

x 10–4

Small–Signal Current Gain

hfe

IC = 1mA

VCE = 10V, f = 1kHz

50

–

300

(NTE123A Only)

IC = 10mA

75

–

375

Output Admittance (NTE123A Only)

hoe

IC = 1mA

VCE = 10V, f = 1kHz

5

–

35

µmhos

IC = 10mA

25

–

200

µmhos

Collector–Base Time Constant

(NTE123A Only)

rb

′Cc

IE = 20mA, VCB = 20V, f = 31.8MHz

–

150

ps

Noise Figure (NTE123A Only)

NF

IC = 100µA, VCE = 10V, RS = 1kΩ,

f = 1kHz

–

4

dB

Real Part of Common–Emitter High

Frequency Input Impedance

(NTE123A Only)

Re(hie)

IC = 20mA, VCE = 20V, f = 300MHz

–

60

Ω

Switching Characteristics

NTE123A

Delay Time

td

VCC = 30V, VBE(off) = 500mV,

–

10

ns

Rise Time

tr

IC = 150mA, IB1 =– 15mA

–

25

ns

Storage Time

ts

VCC = 30V, IC = 150mA,

–

225

ns

Fall Time

tf

IB1 = IB2 = 15mA

–

60

ns

NTE159M

Turn–On Time

ton

VCC = 30V, IC = 150mA,

–

26

45

ns

Delay Time

td

IB1 = 15mA

–

6

10

ns

Rise Time

tr

–

20

40

ns

Turn–Off Time

toff

VCC = 6V, IC = 150mA,

–

70

100

ns

Storage Time

ts

IB1 = IB2 = 15mA

–

50

80

ns

Fall Time

tf

–

20

30

ns

Note 1. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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